Diodes Incorporated — Analog and discrete power solutions
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DMN95H8D5HCT (NRND)

NRND = Not Recommended for New Design

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Feature(s)

  • Low Input Capacitance
  • High BVDSS Rating for Power Application
  • Low Input/Output Leakage
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • Motor Control
  • Backlighting
  • DC-DC Converters
  • Power Management Functions

Specifications & Technical Documents

Product Parameters

CISS Condition @|VDS| (V)

25

CISS Typ (pF)

470

ESD Diodes (Y|N)

No

Polarity

N

QG Typ @ |VGS| = 10V (nC)

7.9

QG Typ @ |VGS| = 4.5V (nC)

N/A

AEC Qualified

No

RDS(ON)Max@ VGS(1.8V)  (mΩ)

N/A

RDS(ON)Max@ VGS(10V)  (mΩ)

7000

RDS(ON)Max@ VGS(2.5V)  (mΩ)

N/A

RDS(ON)Max@ VGS(4.5V)  (mΩ)

N/A

|VDS| (V)

950

|VGS| (±V)

30

|VGS(TH)| Max (V)

5

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2593 2022-11-02 2023-05-02 Device End of Life (EOL)
PCN-2475 2020-08-06 2020-11-06 Qualification of Assembly & Test Site Transfer for Select Discrete Products