Diodes Incorporated
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DMN90H8D5HCT (Not Recommended for new design)

NRND = Not Recommended for New Design

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Feature(s)

- Low Input Capacitance
- High BVDSS Rating for Power Application
- Low Input/Output Leakage
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) No
CISS Condition @|VDS| (V) 25
CISS Typ (pF) 470
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) N/A
|IDS| @TC = +25°C (A) 2.5
PD @TA = +25°C (W) 50
PD @TC = +25°C (W) 1
Polarity N
QG Typ @ |VGS| = 10V (nC) 7.9
QG Typ @ |VGS| = 4.5V (nC) N/A
AEC Qualified No
RDS(ON)Max@ VGS(1.8V)(mΩ) N/A
RDS(ON)Max@ VGS(10V)(mΩ) 7000
RDS(ON)Max@ VGS(2.5V)(mΩ) N/A
RDS(ON)Max@ VGS(4.5V)(mΩ) N/A
|VDS| (V) 900
|VGS| (±V) 30
|VGS(TH)| Max (V) 5

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2593 2022-11-02 2023-05-02 Device End of Life (EOL)
PCN-2475 2020-08-06 2020-11-06 Qualification of Assembly & Test Site Transfer for Select Discrete Products