Dual N-Channel Enhancement Mode MOSFET
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This new generation 60V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Polarity |
N+N |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
60 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
0.2 A |
PD @TA = +25°C (W) |
0.4 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
6000 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
8000 (@5V) mΩ |
|VGS(TH)| Max (V) |
2 V |
QG Typ @ |VGS| = 4.5V (nC) |
0.43 nC |
QG Typ @ |VGS| = 10V (nC) |
0.87 nC |
CISS Typ (pF) |
22 @ 25V pF |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2744 | 2025-06-04 | 2025-09-03 | Additional Wafer Source for Select Discrete Products |
| PCN-2458 | 2020-07-01 | 2020-10-01 | Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products |
