Diodes Incorporated
SOT563

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SOT563.png
Back to MOSFET Master Table

DMN63D1LV

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected up to 2kV

Application(s)

  • Motor Control
  • Power Management Functions
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.55 A
PD @TA = +25°C (W) 0.94 W
RDS(ON)Max@ VGS(10V)(mΩ) 2000 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 3000 (@5V) mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 0.392 nC
CISS Typ (pF) 30 pF
CISS Condition @|VDS| (V) 25 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.