Diodes Incorporated
SOT363

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SOT363.png
Back to MOSFET Master Table

DMN62D4LDW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change
    control (i.e. parts qualified to AEC-Q100/101/200, PPAP
    capable, and manufactured in IATF 16949 certified facilities),
    please contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Motor Control
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.261 A
PD @TA = +25°C (W) 0.45 W
RDS(ON)Max@ VGS(10V)(mΩ) 3000 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 4000 mΩ
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 4.5V (nC) 0.51 nC
QG Typ @ |VGS| = 10V (nC) 1.04 nC
CISS Typ (pF) 41 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

FAQs

Related Application FAQs