NRND = Not Recommended for New Design
N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
CISS Condition @|VDS| (V) |
30 |
|---|---|
CISS Typ (pF) |
31 |
ESD Diodes (Y|N) |
Yes |
Polarity |
N |
QG Typ @ |VGS| = 4.5V (nC) |
0.5 |
AEC Qualified |
Yes |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
3000 |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
2500 |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
2000 |
|VDS| (V) |
60 |
|VGS| (±V) |
20 |
|VGS(TH)| Max (V) |
1 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2458 | 2020-07-01 | 2020-10-01 | Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products |
