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DMN62D0UV

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Dual N-Channel MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.49 A
P_D @T_A = +25°C (W)	0.74 W
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	2000 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	2500 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	3000 mΩ
\|V_GS(TH)\| Min (V)	0.5 V
\|V_GS(TH)\| Max (V)	1.0 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.5 nC
C_ISS Typ (pF)	32 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMN62D0UV.spice.txt

Recommended Soldering Techniques

TN1.pdf