Diodes Incorporated — Analog and discrete power solutions
SOT563

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT563

SOT563

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT563

SOT563

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT563

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DMN601VK

Dual N-Channel Enhancement Mode Field Effect Transistor

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface-Mount Package
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under a separate datasheet (DMN601VKQ)

Application(s)

  • General-purpose interfacing switches
  • Power-management functions
  • Analog switches

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
AEC Qualified Yes
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
RDS(ON)Max@ VGS(10V)  (mΩ) 2000 mΩ
RDS(ON)Max@ VGS(4.5V)  (mΩ) 3000 mΩ
|VGS(TH)| Max (V) 2.5 V
CISS Typ (pF) 50 max @ 25V pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2744 2025-06-04 2025-09-03 Additional Wafer Source for Select Discrete Products
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products