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DMN601VK

Dual N-Channel Enhancement Mode Field Effect Transistor

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface-Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-compliant part is available under a separate datasheet (DMN601VKQ)

Application(s)

General-purpose interfacing switches
Power-management functions
Analog switches

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	Yes
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
R_DS(ON)Max@ V_GS(10V) (mΩ)	2000 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	3000 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
C_ISS Typ (pF)	50 max @ 25V pF

Technical Documents

SPICE Model

DMN601VK.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2744	2025-06-04	2025-09-03	Additional Wafer Source for Select Discrete Products
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products