Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT563
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT563
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT563
Dual N-Channel Enhancement Mode Field Effect Transistor
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | Yes |
| Polarity | N+N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 60 V |
| |VGS| (±V) | 20 ±V |
| RDS(ON)Max@ VGS(10V) (mΩ) | 2000 mΩ |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 3000 mΩ |
| |VGS(TH)| Max (V) | 2.5 V |
| CISS Typ (pF) | 50 max @ 25V pF |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2744 | 2025-06-04 | 2025-09-03 | Additional Wafer Source for Select Discrete Products |
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
