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DMN53D0LTQ

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/ Output Leakage
Ultra-Small Surface Mount Package
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DIODES™ DMN53D0LTQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

Product Specifications

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	50 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.35 A
P_D @T_A = +25°C (W)	0.3 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	1600 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	2500 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	4500 mΩ
\|V_GS(TH)\| Min (V)	0.8 V
\|V_GS(TH)\| Max (V)	1.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.6 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	1.4 nC
C_ISS Typ (pF)	46 pF
C_ISS Condition @\|V_DS\| (V)	25 V

SPICE Model

DMN53D0LTQ.spice.txt

Recommended Soldering Techniques

TN1.pdf