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DMN52D0UVQ

50V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: battery-management systems, power-management functions, and load switches.

Feature(s)

Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V Max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface-Mount Package
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMN52D0UVQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Battery-management systems
Power-management functions
Load switches

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	50 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	0.48 @ 5V A
P_D @T_A = +25°C (W)	0.89 W
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	2000 @ 5V mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	2500 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	4000 mΩ
\|V_GS(TH)\| Min (V)	0.49 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.8 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	1.5 nC
C_ISS Typ (pF)	39 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMN52D0UVQ.spice.txt

Recommended Soldering Techniques

TN1.pdf