Diodes Incorporated
SOT563

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SOT563.png
Back to MOSFET Master Table

DMN52D0UVA

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Very Low Gate Threshold Voltage, 1.0V Max
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Battery management systems
  • Power management functions
  • Load switches

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 50 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 0.48@5V A
PD @TA = +25°C (W) 0.89 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 2000@5V mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 2500 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 4000 mΩ
|VGS(TH)| Min (V) 0.49 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.8 nC
QG Typ @ |VGS| = 10V (nC) 1.5 nC
CISS Typ (pF) 39 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf