Diodes Incorporated
SOT363

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DMN3401LDWQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen- and Antimony-Free. “Green” Device
  • The DMN3401LDWQ is suitable for automotive applications
    requiring specific change control and is AEC-Q101 qualified,
    is PPAP capable, and is manufactured in IATF16949:2016
    certified facilities.

Application(s)

  • Motor Control
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.8
PD @TA = +25°C (W) 0.35
RDS(ON)Max@ VGS(10V)(mΩ) 400 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 700 mΩ
|VGS(TH)| Max (V) 1.6 V
QG Typ @ |VGS| = 4.5V (nC) 0.5 nC
QG Typ @ |VGS| = 10V (nC) 1.2 nC
CISS Typ (pF) 50 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf