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DMN33D8LVQ

Dual N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET has been designed to minimize the on-state resistance (R_DS(ON))yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DIODES™ DMN33D8LVQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Motor controls
Power management functions
DC-DC converters
Backlighting

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.35 A
P_D @T_A = +25°C (W)	0.43 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	2400 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	3000 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	7000 mΩ
\|V_GS(TH)\| Min (V)	0.8 V
\|V_GS(TH)\| Max (V)	1.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.5 nC
C_ISS Typ (pF)	48 pF
C_ISS Condition @\|V_DS\| (V)	5 V

Technical Documents

SPICE Model

DMN33D8LVQ.spice.txt

Recommended Soldering Techniques

TN1.pdf