Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOT363.pngDUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Polarity | N+N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 0.25 A |
| PD @TA = +25°C (W) | 0.35 W |
| RDS(ON)Max@ VGS(10V)(mΩ) | 2400 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 3000 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 7000 mΩ |
| |VGS(TH)| Max (V) | 1.5 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.55 nC |
| QG Typ @ |VGS| = 10V (nC) | 1.23 nC |
| CISS Typ (pF) | 48 pF |
| CISS Condition @|VDS| (V) | 5 V |
