Diodes Incorporated
SOT363

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DMN33D8LDWQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device 
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable 

Application(s)

  • Motor Control
  • DC-DC Converters
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.25
PD @TA = +25°C (W) 0.35
RDS(ON)Max@ VGS(10V)(mΩ) 2400 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 3000 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 7000 mΩ
|VGS(TH)| Max (V) 1.5 V
QG Typ @ |VGS| = 4.5V (nC) 0.55 nC
QG Typ @ |VGS| = 10V (nC) 1.23 nC
CISS Typ (pF) 48 pF
CISS Condition @|VDS| (V) 5 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf