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DMN32D0LV

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Datasheet

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Description

This MOSFET has been designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive-products/.
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.

https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	10 ±V
\|I_DS\| @T_A = +25°C (A)	0.68 A
P_D @T_A = +25°C (W)	0.48 W
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	1200 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	1500 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	2200 mΩ
\|V_GS(TH)\| Min (V)	0.6 V
\|V_GS(TH)\| Max (V)	1.2 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.62 nC
C_ISS Typ (pF)	44.8 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMN32D0LV.spice.txt

Recommended Soldering Techniques

TN1.pdf