Diodes Incorporated
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DMN3061LCA3

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the footprint in handheld and mobile application. It can be used to replace many small signals MOSFET with as really small footprint.

Feature(s)

  • Low Qg & Qgd
  • Small Footprint
  • Low Profile 0.20mm Height
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change
    control (i.e. parts qualified to AEC-Q100/101/200, PPAP
    capable, and manufactured in IATF 16949 certified facilities),
    please contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Battery Management
  • Load Switch
  • Battery Protection
  • Handheld and Mobile Application

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 4.6 A
PD @TA = +25°C (W) 1.88 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 62 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 2.5 mΩ
|VGS(TH)| Max (V) 1.1 V
QG Typ @ |VGS| = 4.5V (nC) 1.4 nC
CISS Typ (pF) 126 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf