Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT563
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT563
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT563
N-Channel Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | No |
| Polarity | N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 0.7 A |
| PD @TA = +25°C (W) | 0.78 W |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 990 mΩ |
| RDS(ON)Max@ VGS(2.5V) (mΩ) | 1200 mΩ |
| |VGS(TH)| Min (V) | 0.4 V |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.28 nC |
| CISS Typ (pF) | 14.6 pF |
| CISS Condition @|VDS| (V) | 16 V |
