Diodes Incorporated
SOT363

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DMN2710UDWQ

Dual N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Complementary Pair MOSFET
  • Ultra-Small Surface Mount Package
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • The DMN2710UDWQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF 16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
    Memories, Transistors, etc.
  • Power Supply Converter Circuits

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 6 ±V
|IDS| @TA = +25°C (A) 0.8
PD @TA = +25°C (W) 0.49
RDS(ON)Max@ VGS(4.5V)(mΩ) 450 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 600 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 750 mΩ
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.6 nC

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

FAQs

Related Application FAQs