Diodes Incorporated — Analog and discrete power solutions
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DMN2080UCB4

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) with thin WLCSP packaging process and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Built-in G-S Protection Diode Against ESD 2kV HBM
  • Trench-MOS Technology with The Lowest RDS(ON):
    • RDS(ON) = 43mΩ to Minimize On-State Losses
  • VGS(TH) = 0.7V Typ. for A Low Turn-On Potential
  • CSP with Footprint 0.8mm × 0.8mm
  • Height = 0.35mm for Low Profile
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • DC-DC Converters
  • Battery Management
  • Load Switch

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 4
PD @TA = +25°C (W) 1.25
RDS(ON)Max@ VGS(4.5V)(mΩ) 56 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 68 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 90 mΩ
|VGS(TH)| Min (V) 0.4 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 7.4 nC
CISS Typ (pF) 540 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf