Diodes Incorporated
SOT363

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SOT363.png
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DMN2075UDW

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 20V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.

Application(s)

  • DC-DC Converters
  • Power management functions
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) No
    |VDS| (V) 20 V
    |VGS| (±V) 8 ±V
    |IDS| @TA = +25°C (A) 2.8 A
    PD @TA = +25°C (W) 0.58 W
    RDS(ON)Max@ VGS(4.5V)(mΩ) 48 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 59 mΩ
    RDS(ON)Max@ VGS(1.8V)(mΩ) 70 mΩ
    |VGS(TH)| Min (V) 0.4 V
    |VGS(TH)| Max (V) 1 V
    QG Typ @ |VGS| = 4.5V (nC) 7 nC
    CISS Typ (pF) 594 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC