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DMN2024LCA4

N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET has been designed to minimize the on-state resistance (R_SS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Common Drain Configuration with:
R_SS(ON)= 20mΩ to Minimize On-State Losses
Q_g = 28.5nC for Ultra-Fast Switching
V_GS(TH)= 0.9V typ. for a Low Turn-On Potential
CSP with Footprint 1.35mm × 1.35mm
Height = 0.22mm for Low Profile
ESD Protection of Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Battery managements
Load switches
Battery protections

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	10 ±V
\|I_DS\| @T_A = +25°C (A)	8.3 A
P_D @T_A = +25°C (W)	2.4 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	21 (@ 6.5V) mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	23 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	34 mΩ
\|V_GS(TH)\| Min (V)	0.68 V
\|V_GS(TH)\| Max (V)	1.3 V
Q_G Typ @ \|V_GS\| = 10V (nC)	28.5 nC
C_ISS Typ (pF)	991 pF
C_ISS Condition @\|V_DS\| (V)	10 V

Technical Documents

SPICE Model

DMN2024LCA4.spice.txt

Recommended Soldering Techniques

TN1.pdf