Diodes Incorporated
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DMN2023UCB4

N-Channel Mosfet

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Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) with thin WLCSP packaging process and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Battery Management
  • Load Switch
  • Battery Protection

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 24 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 6 A
PD @TA = +25°C (W) 1.45 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 26 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 40 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1.3 V
QG Typ @ |VGS| = 4.5V (nC) 29 nC
CISS Typ (pF) 2564 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf