Diodes Incorporated — Analog and discrete power solutions
Back to DMN2023UCB4

DMN2023UCB4

N-Channel MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) with thin WLCSP packaging process and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Battery Management
  • Load Switch
  • Battery Protection

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Polarity

N+N

ESD Diodes (Y|N)

Yes

|VDS| (V)

24 V

|VGS| (±V)

12 ±V

|IDS| @TA = +25°C (A)

6 A

PD @TA = +25°C (W)

1.45 W

RDS(ON)Max@ VGS(4.5V)  (mΩ)

26 mΩ

RDS(ON)Max@ VGS(2.5V)  (mΩ)

40 mΩ

|VGS(TH)| Min (V)

0.5 V

|VGS(TH)| Max (V)

1.3 V

QG Typ @ |VGS| = 4.5V (nC)

29 nC

CISS Typ (pF)

2564 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products