Diodes Incorporated
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DMN2016LHAB

N-Channel Mosfet

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Description

The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -1.8V while retaining a -12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration

Application(s)

  • Power Management Functions
  • Battery Pack
  • Load Switch
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N+N
    ESD Diodes (Y|N) Yes
    |VDS| (V) 20 V
    |VGS| (±V) 12 ±V
    |IDS| @TA = +25°C (A) 7.5 A
    PD @TA = +25°C (W) 1.65 W
    RDS(ON)Max@ VGS(4.5V)(mΩ) 15.5 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 20 mΩ
    RDS(ON)Max@ VGS(1.8V)(mΩ) 30 mΩ
    |VGS(TH)| Min (V) 0.5 V
    |VGS(TH)| Max (V) 1.1 V
    QG Typ @ |VGS| = 4.5V (nC) 16 nC
    QG Typ @ |VGS| = 10V (nC) 37 nC
    CISS Typ (pF) 1550 pF

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    SPICE Model

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