Diodes Incorporated
Back to MOSFET Master Table

DMN2014LHAB

N-Channel Mosfet

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Power Management Functions
  • Battery Pack
  • Load Switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 9 A
PD @TA = +25°C (W) 1.7 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 13 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 18 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 28 mΩ
|VGS(TH)| Min (V) 0.3 V
|VGS(TH)| Max (V) 1.1 V
QG Typ @ |VGS| = 4.5V (nC) 16 nC
QG Typ @ |VGS| = 10V (nC) 37 nC
CISS Typ (pF) 1550 pF

Related Content

Packages

Applications

Technical Documents

Recommended Soldering Techniques

TN1.pdf

FAQs

Related Application FAQs