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DMN2014LHAB

N-Channel MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Power Management Functions
  • Battery Pack
  • Load Switch

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Polarity

N+N

ESD Diodes (Y|N)

Yes

|VDS| (V)

20 V

|VGS| (±V)

12 ±V

|IDS| @TA = +25°C (A)

9 A

PD @TA = +25°C (W)

1.7 W

RDS(ON)Max@ VGS(4.5V)  (mΩ)

13 mΩ

RDS(ON)Max@ VGS(2.5V)  (mΩ)

18 mΩ

RDS(ON)Max@ VGS(1.8V)  (mΩ)

28 mΩ

|VGS(TH)| Min (V)

0.3 V

|VGS(TH)| Max (V)

1.1 V

QG Typ @ |VGS| = 4.5V (nC)

16 nC

QG Typ @ |VGS| = 10V (nC)

37 nC

CISS Typ (pF)

1550 pF

Related Content

Packages

Applications

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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