Diodes Incorporated
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DMN10H220LFVW

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Wettable Flank for Improved Optical Inspections
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Load Switch

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 11 A
PD @TA = +25°C (W) 2.4 W
PD @TC = +25°C (W) 41 W
RDS(ON)Max@ VGS(10V)(mΩ) 222 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 270 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 4.1 nC
QG Typ @ |VGS| = 10V (nC) 7.4 nC
CISS Typ (pF) 366 pF
CISS Condition @|VDS| (V) 50 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

FAQs

Related Application FAQs