Diodes Incorporated
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DMJ70H600HCT (Not Recommended for new design)

NRND = Not Recommended for New Design

700V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.

https://www.diodes.com/quality/product-definitions/

Application(s)

  • Motor controls
  • DC-DC converters
  • Power managements

Product Specifications

Product Parameters

CISS Condition @|VDS| (V) 25
CISS Typ (pF) 570
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) No
|IDS| @TC = +25°C (A) 8.5
PD @TA = +25°C (W) 2.3
PD @TC = +25°C (W) 104
Polarity N
QG Typ @ |VGS| = 10V (nC) 17.4
AEC Qualified No
RDS(ON)Max@ VGS(10V)(mΩ) 600
|VDS| (V) 700
|VGS| (±V) 30
|VGS(TH)| Max (V) 5
|VGS(TH)| Min (V) 2

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2607 2023-02-22 2023-08-22 Device End of Life (EOL)