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DMJ65H430SCTI (NRND)

NRND = Not Recommended for New Design

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Feature(s)

Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/ Output Leakage
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Application(s)

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Specifications & Technical Documents

Product Parameters

C_ISS Condition @\|V_DS\| (V)	100
C_ISS Typ (pF)	775
ESD Diodes (Y\|N)	No
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	24.5
AEC Qualified	No
R_DS(ON)Max@ V_GS(10V) (mΩ)	430
\|V_DS\| (V)	650
\|V_GS\| (±V)	30
\|V_GS(TH)\| Max (V)	5

Technical Documents

SPICE Model

DMJ65H430SCTI.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2584	2022-05-19	2022-11-19	Device End of Life (EOL)