30V N-Channel Enhancement Mode MOSFET H-Bridge
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Polarity |
4N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
30 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
13 A |
PD @TA = +25°C (W) |
2.1 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
10 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
15 mΩ |
|VGS(TH)| Max (V) |
3 V |
QG Typ @ |VGS| = 4.5V (nC) |
9 nC |
QG Typ @ |VGS| = 10V (nC) |
17 nC |
CISS Typ (pF) |
1171 pF |
CISS Condition @|VDS| (V) |
15 V |
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