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DMHT3006LFJ

30V N-Channel Enhancement Mode MOSFET H-Bridge

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance

  • Low Input Capacitance

Application(s)

  • High-Efficiency Bridge Rectifiers

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Polarity

4N

ESD Diodes (Y|N)

No

|VDS| (V)

30 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

13 A

PD @TA = +25°C (W)

2.1 W

RDS(ON)Max@ VGS(10V)  (mΩ)

10 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

15 mΩ

|VGS(TH)| Max (V)

3 V

QG Typ @ |VGS| = 4.5V (nC)

9 nC

QG Typ @ |VGS| = 10V (nC)

17 nC

CISS Typ (pF)

1171 pF

CISS Condition @|VDS| (V)

15 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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