Diodes Incorporated
V DFN5045 12

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DMHT10H032LFJ

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.

Feature(s)

  • Thermally Efficient Package – Cooler Running Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • Motor Control
  • DC-DC Converters
  • Power Management

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 6 A
PD @TA = +25°C (W) 1.9 W
RDS(ON)Max@ VGS(10V)(mΩ) 33 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 50 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 6.3 nC
QG Typ @ |VGS| = 10V (nC) 11.9 nC
CISS Typ (pF) 683 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

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