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V DFN5045 12

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. V-DFN5045-12

V DFN5045 12

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. V-DFN5045-12

V DFN5045 12

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. V-DFN5045-12

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DMHT10H032LFJ

100V N-Channel Enhancement Mode MOSFET

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Description

This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.

Feature(s)

  • Thermally Efficient Package – Cooler Running Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • Motor Control
  • DC-DC Converters
  • Power Management

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

100 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

6 A

PD @TA = +25°C (W)

1.9 W

RDS(ON)Max@ VGS(10V)  (mΩ)

33 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

50 mΩ

|VGS(TH)| Max (V)

2.5 V

QG Typ @ |VGS| = 4.5V (nC)

6.3 nC

QG Typ @ |VGS| = 10V (nC)

11.9 nC

CISS Typ (pF)

683 pF

CISS Condition @|VDS| (V)

50 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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