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This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.
| CISS Condition @|VDS| (V) | N/A |
|---|---|
| CISS Typ (pF) | N/A |
| ESD Diodes (Y|N) | No |
| Polarity | N |
| QG Typ @ |VGS| = 10V (nC) | 39 |
| QG Typ @ |VGS| = 4.5V (nC) | N/A |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V) (mΩ) | N/A |
| RDS(ON)Max@ VGS(10V) (mΩ) | 1300 |
| RDS(ON)Max@ VGS(2.5V) (mΩ) | N/A |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | N/A |
| |VDS| (V) | 650 |
| |VGS| (±V) | 30 |
| |VGS(TH)| Max (V) | 5 |
