Diodes Incorporated
SOT363

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DMG6302UDW

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P+P
ESD Diodes (Y|N) Yes
|VDS| (V) 25 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 0.15
PD @TA = +25°C (W) 0.38
RDS(ON)Max@ VGS(4.5V)(mΩ) 10000 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 13000 (@2.7V) mΩ
|VGS(TH)| Min (V) 0.65 V
|VGS(TH)| Max (V) 1.5 V
QG Typ @ |VGS| = 4.5V (nC) 0.34 nC
CISS Typ (pF) 30.7 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products