Diodes Incorporated

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DIODES has been fabricated using an advanced high voltage MOSFET process , This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.


  • Motor control
  • Backlighting
  • DC-DC Converters
  • Power Management Functions
  • Product Specifications

    Product Parameters

    Compliance (Only Automotive supports PPAP) No
    CISS Condition @|VDS| (V) N/A
    CISS Typ (pF) N/A
    ESD Diodes (Y|N) No
    |IDS| @TA = +25°C (A) 4
    |IDS| @TC = +25°C (A) N/A
    PD @TA = +25°C (W) N/A
    PD @TC = +25°C (W) N/A
    Polarity N
    QG Typ @ |VGS| = 10V (nC) 13.5
    QG Typ @ |VGS| = 4.5V (nC) N/A
    AEC Qualified Yes
    RDS(ON)Max@ VGS(1.8V)(mΩ) N/A
    RDS(ON)Max@ VGS(10V)(mΩ) 3000
    RDS(ON)Max@ VGS(2.5V)(mΩ) N/A
    RDS(ON)Max@ VGS(4.5V)(mΩ) N/A
    |VDS| (V) 650
    |VGS| (±V) 30
    |VGS(TH)| Max (V) 5

    Related Content


    Technical Documents

    SPICE Model

    Recommended Soldering Techniques


    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2389 2019-02-05 2019-08-05 Device End of Life