Diodes Incorporated — Analog and discrete power solutions
Back to Inactve Datasheet Archive

DMG4N60SCT (Obsolete)

N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Feature(s)

  • Low Input Capacitance
  • High BVDSS Rating for Power Application
  • Low Input/Output Leakage
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • AC-DC adaptor
  • LED Backlighting

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive supports PPAP) No
CISS Condition @|VDS| (V) 25
CISS Typ (pF) 532
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) N/A
|IDS| @TC = +25°C (A) 4.5
PD @TA = +25°C (W) N/A
PD @TC = +25°C (W) 113
Polarity N
QG Typ @ |VGS| = 10V (nC) 14.3
QG Typ @ |VGS| = 4.5V (nC) N/A
AEC Qualified No
RDS(ON)Max@ VGS(1.8V)(mΩ) N/A
RDS(ON)Max@ VGS(10V)(mΩ) 2500
RDS(ON)Max@ VGS(2.5V)(mΩ) N/A
RDS(ON)Max@ VGS(4.5V)(mΩ) N/A
|VDS| (V) 600
|VGS| (±V) 30
|VGS(TH)| Max (V) 4.5

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity