Diodes Incorporated
SOT563

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DMG1026UV (Not Recommended for new design)

NRND = Not Recommended for New Design

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
  • DC-DC Converters
  • Power management functions

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) On Request
CISS Typ (pF) 32 @ 25V
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) 0.41
PD @TA = +25°C (W) 0.58
Polarity N+N
QG Typ @ |VGS| = 4.5V (nC) 0.45
AEC Qualified Yes
RDS(ON)Max@ VGS(10V)(mΩ) 1800
RDS(ON)Max@ VGS(4.5V)(mΩ) 2100
|VDS| (V) 60
|VGS| (±V) 20
|VGS(TH)| Max (V) 1.8

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products