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SOT563.pngCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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This new generation 20V N + P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N+P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 20, 20 V |
|VGS| (±V) | 12, 8 ±V |
|IDS| @TA = +25°C (A) | 1.03, 0.7 A |
PD @TA = +25°C (W) | 1 W |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 500, 1000 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 700, 1500 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 900, 2000 mΩ |
|VGS(TH)| Min (V) | 0.5, 0.5 V |
|VGS(TH)| Max (V) | 0.9, 1 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.5, 0.5 nC |
CISS Typ (pF) | 37, 46 pF |
CISS Condition @|VDS| (V) | 10, 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |