HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8
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The DGD2181M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High-voltage processing techniques enable the DGD2181M’s high-side to switch to 600V in a bootstrap operation.
The DGD2181M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high-pulse current buffers designed for minimum driver cross conduction.
The DGD2181M is offered in SO-8 (Type TH) package and the
operating temperature extends from -40°C to +125°C.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
Offset Voltage Max (V) |
600 V |
Inputs |
HIN, LIN |
Output Current IO+ (Typ) (mA) |
1900 mA |
Output Current IO- (Typ) (mA) |
2300 mA |
tON (Typ) (ns) |
180 ns |
tOFF (Typ) (ns) |
220 ns |
tR (Typ) (ns) |
40 ns |
tF (Typ) (ns) |
20 ns |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |