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The DGD2103M is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2103M’s high side to switch to 600V in a bootstrap operation.

The DGD2103M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver output features high pulse current buffers designed for minimum driver cross conduction. DGD2103M has a fixed internal deadtime of 420ns (typical).

The DGD2103M is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.


  • Motor Controls


  • Floating High-Side Driver in Bootstrap Operation to 600V
  • Drives Two N-channel MOSFETs or IGBTs in a Half-Bridge Configuration
  • Designed for enhanced performance in noisy motor applications
  • 290mA Source/600mA Sink Output Current Capability
  • Outputs Tolerant to Negative Transients
  • Internal Dead Time of 420ns to Protect MOSFETs
  • Wide Low Side Gate Driver Supply Voltage: 10V to 20V
  • Logic Input (HIN and LIN*) 3.3V Capability
  • Schmitt Triggered Logic Inputs
  • Undervoltage Lockout for VCC (Logic and Low Side Supply)
  • Extended Temperature Range: -40°C to +125°C

Product Specifications

Product Parameters

Offset Voltage Max 600 V
Inputs HIN, LIN (Out of Phase)
Output Current IO+ (Typ) 290 mA
Output Current IO- (Typ) 600 mA
Internal Deadtime (Typ) 420 ns
tON (Typ) 680 ns
tOFF (Typ) 150 ns
tR (Typ) 70 ns
tF (Typ) 35 ns

Related Content

SO-8 (Type TH)


Technical Documents

Brochures and Flyers

Recommended Soldering Techniques


Orderable Part Number Authorized Distributor Quantity Inventory Date Buy Online Region
DGD2103MS8-13 Mouser Electronics Inc. 2237 8/3/2020 Buy Now United States
DGD2103MS8-13 Digi-Key Electronics 2051 8/2/2020 Buy Now United States
DGD2103MS8-13 Farnell, An Avnet Company 2371 8/2/2020 Buy Now England


Product Change Notices

PCN # Issue Date Subject
PCN-2267 2017-03-31 End of Life for Select Parts with Replacements, and Qualification of an Additional Wafer Source for Select Parts