Diodes Incorporated
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DGD21032 (Obsolete)

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The DGD21032 is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD21032’s high side to switch to 600V in a bootstrap operation.

The DGD21032 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver output features high pulse current buffers designed for minimum driver cross conduction. DGD21032 has a fixed internal deadtime of 430ns (typical).

The DGD21032 is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.


  • Floating high-side driver in bootstrap operation to 600V
  • Drives two N-channel MOSFETs or IGBTs in a half-bridge configuration
  • 290mA source/600mA sink output current capability
  • Outputs tolerant to negative transients
  • Internal dead time of 430ns to protect MOSFETs
  • Wide low side gate driver supply voltage: 10V to 20V
  • Logic input (HIN and LIN*) 3.3V capability
  • Schmitt triggered logic inputs
  • Undervoltage lockout for VCC (logic and low side supply)
  • Extended temperature range: -40°C to +125°C


  • DC-DC Converters
  • DC-AC Inverters
  • AC-DC Power Supplies
  • Motor Controls
  • Class D Power Amplifiers

Product Specifications

Product Parameters

Inputs HIN, LIN (Out of Phase)
Internal Deadtime (Typ) 430
Offset Voltage Max (V) 600
Output Current IO- (Typ) (mA) 600
Output Current IO+ (Typ) (mA) 290
tF (Typ) (ns) 35
tOFF (Typ) (ns) 150
tON (Typ) (ns) 680
tR (Typ) (ns) 70

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2502 2021-03-15 2021-09-15 Device End of Life (EOL)