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BC856ASQ

Dual PNP, 65V, 0.1A, SOT363

Datasheet

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature(s)

BVCEO > -65V
IC = -100mA High Collector Current
Complementary NPN Types Available (BC846AS)
Ideally Suited for Automatic Insertion
For Switching and AF Amplifier Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)

Application(s)

Body Control Module

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Automotive
Category	Small Signal Transistor
Polarity	PNP + PNP
RCE(sat) (mΩ)	-
VCEO, VCES (V)	65
IC (A)	0.1
ICM (A)	0.2
PD (W)	0.2
hFE (Min)	125
hFE (@ IC) (A)	0.002
hFE (@ IC2) (A)	-
VCE(sat) Max (mV)	300
V_CE(SAT) (@ IC/IB) (A/mA)	0.01/0.5
VCE(sat) (Max.2) (mV)	650
VCE(sat) (@ IC/IB2) (A/mA)	0.1/5
fT (MHz)	100

Technical Documents

SPICE Model

BC856ASQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2462	2020-05-08	2021-04-11	Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)