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BAW56HDW

SURFACE MOUNT SWITCHING DIODE ARRAY

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Description

Surface mount switching diode array.

Feature(s)

  • Fast Switching Speed
  • High Reverse Breakdown Voltage
  • Low Leakage Current
  • Low Capacitance
  • For General Purpose Switching Applications
  • Two “BAW56” Circuits In One Package
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Application(s)

  • Computers
  • Consumer Appliactions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Standard
Configuration Dual-Dual, Com. Anode
Polarity Anode, Cathode
Power Rating (mW) 350 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 100 V
Reverse Recovery Time trr (ns) 4 ns
Maximum Average Rectifier Current IO (mA) 250 mA
Maximum Peak Forward Surge Current IFSM (A) 4 A
Forward Voltage Drop VF @ IF (mA) 0.715, 1 mA
Maximum ReverseCurrent IR (µA) 0.5 µA
TotalCapacitance CT (pF) 1.5 pF
VF(V) Max @ IF=100mA 1
V(BR)R (V) Min @IR=100?A 100V@2.5?A
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100? 4
Maximum Reverse Current IR @ VR (V) 80 V
VF(V) Max @ IF=10mA 0.855
IR(uA) Max @ VR=80V 0.5
CT(pF) Max @ VR = 0V, f = 1MHz 1.5

Related Content

Packages

Applications

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site
PCN-2315 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility

FAQs

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