Diodes Incorporated — Analog and discrete power solutions
SOT363

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BAS16HTWQ

SURFACE MOUNT SWITCHING DIODE ARRAY

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Feature(s)

  • Fast Switching Speed
  • High Reverse Breakdown Voltage
  • Low Leakage Current
  • Low Capacitance
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The BAS16HTWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

AEC Qualified

Yes

Configuration

Triple, Isolated

Polarity

Anode, Cathode

Power Rating(mW)

250 mW

ESD Diodes (Y|N)

No

Peak RepetitiveReverse VoltageVRRM (V)

100 V

Reverse RecoveryTime trr (ns)

4 ns

Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω

4

V(BR)R (V) Min @IR=100μA

100V@2.5?A

Maximum Average Rectifier Current IO (mA)

200 mA

Maximum Peak Forward Surge Current IFSM (A)

4 A

Forward Voltage Drop VF @ IF (mA)

0.715, 1 mA

Maximum ReverseCurrent IR (µA)

0.5 µA

TotalCapacitance CT (pF)

1.5 pF

VF(V) Max @ IF=100mA

1

Maximum Reverse Current IR @ VR (V)

80 V

IR(nA) Max @ VR=5V

50

IR(uA) Max @ VR=80V

0.5

CT(pF) Max @ VR = 0V, f = 1MHz

1.5

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2640 2023-09-12 2024-03-13 Device End of Life (EOL) - Automotive
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)