Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT363
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT363
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT363
60V Dual N-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | No |
| Polarity | N+N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 60 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 0.247 A |
| PD @TA = +25°C (W) | 0.29 W |
| RDS(ON)Max@ VGS(10V) (mΩ) | 4000 mΩ |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 4100 mΩ |
| |VGS(TH)| Max (V) | 2.5 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.9 nC |
| CISS Typ (pF) | 41 pF |
| CISS Condition @|VDS| (V) | 25 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2744 | 2025-06-04 | 2025-09-03 | Additional Wafer Source for Select Discrete Products |
