60V Dual N-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Compliance (Only Automotive Supports PPAP) |
Standard |
---|---|
AEC Qualified |
No |
Polarity |
N+N |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
60 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
0.247 A |
PD @TA = +25°C (W) |
0.29 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
4000 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
4100 mΩ |
|VGS(TH)| Max (V) |
2.5 V |
QG Typ @ |VGS| = 4.5V (nC) |
0.9 nC |
CISS Typ (pF) |
41 pF |
CISS Condition @|VDS| (V) |
25 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2744 | 2025-06-04 | 2025-09-03 | Additional Wafer Source for Select Discrete Products |