Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT363
60V Dual N-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | No |
| Polarity | N+N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 60 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 0.247 A |
| PD @TA = +25°C (W) | 0.29 W |
| RDS(ON)Max@ VGS(10V) (mΩ) | 4000 mΩ |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 4100 mΩ |
| |VGS(TH)| Max (V) | 2.5 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.9 nC |
| CISS Typ (pF) | 41 pF |
| CISS Condition @|VDS| (V) | 25 V |
