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2N7002DWS

60V Dual N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage

Application(s)

Motor Control
Power Management Functions
Backlighting

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.247 A
P_D @T_A = +25°C (W)	0.29 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	4000 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	4100 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.9 nC
C_ISS Typ (pF)	41 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

2N7002DWS .spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2744	2025-06-04	2025-09-03	Additional Wafer Source for Select Discrete Products