Diodes Incorporated

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2N7002DWA (Not Recommended for new design)

NRND = Not Recommended for New Design

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This new generation 60V P-Channel enhancement mode MOSFET has been designed to minimise RDS(ON) and yet maintain superior switching performance. This device is ideally suited to handheld application.


  • DC-DC Converters
  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) On Request
CISS Condition @|VDS| (V) 25
CISS Typ (pF) 22
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) 0.2
|IDS| @TC = +25°C (A) N/A
PD @TA = +25°C (W) 0.3
PD @TC = +25°C (W) N/A
Polarity N+N
QG Typ @ |VGS| = 10V (nC) 0.87
QG Typ @ |VGS| = 4.5V (nC) 0.43
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) N/A
RDS(ON)Max@ VGS(10V)(mΩ) 6000
RDS(ON)Max@ VGS(2.5V)(mΩ) N/A
RDS(ON)Max@ VGS(4.5V)(mΩ) 8000
|VDS| (V) 60
|VGS| (±V) 20
|VGS(TH)| Max (V) 2.5

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