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2N7002DWA (NRND)

NRND = Not Recommended for New Design

Inactive Datasheet Archive

Datasheet

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Description

This new generation 60V P-Channel enhancement mode MOSFET has been designed to minimise R_DS(ON) and yet maintain superior switching performance. This device is ideally suited to handheld application.

Application(s)

DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc

Specifications & Technical Documents

Product Parameters

C_ISS Condition @\|V_DS\| (V)	25
C_ISS Typ (pF)	22
ESD Diodes (Y\|N)	Yes
Polarity	N+N
Q_G Typ @ \|V_GS\| = 10V (nC)	0.87
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.43
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	N/A
R_DS(ON)Max@ V_GS(10V) (mΩ)	6000
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	N/A
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	8000
\|V_DS\| (V)	60
\|V_GS\| (±V)	20
\|V_GS(TH)\| Max (V)	2.5

Technical Documents

SPICE Model

2N7002DWA.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products