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PNP, 40V, 1.5A, SOT23

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Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.


  • MOSFET and IGBT gate driving
  • Low power DC-DC conversion
  • Product Specifications

    Product Parameters

    Category Low Saturation Transistor
    Compliance(Only Automotive supports PPAP) Standard
    Polarity PNP
    VCEO, VCES (V) 40
    IC (A) 1.5
    ICM (A) 5
    PD (W) 0.35
    hFE (Min) 300
    hFE (@ IC) (A) 0.01
    hFE(Min 2) 120
    hFE (@ IC2) (A) 1.5
    VCE(sat) Max (mV) 290
    VCE(SAT) (@ IC/IB) (A/mA) 1/20
    VCE(sat) (Max.2) (mV) 190
    VCE(sat) (@ IC/IB2) (A/mA) 1.5/75
    fT (MHz) 270
    RCE(sat) (mΩ) 82

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    Technical Documents

    SPICE Model


    MDS Reports

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    Orderable Part Number Buy from Distributor / Contact Sales Request Samples


    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Arrow Electronics 1837 9/21/2021 United States Buy Now
    Mouser Electronics Inc. 490 9/21/2021 South America, North America, Asia, Europe, Middle East Buy Now
    Rutronik GmbH 3000 9/21/2021 Germany Buy Now
    Request Sample


    Product Change Notices

    PCN # Issue Date Implementation Date Subject
    PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
    Source for Select Discrete Products
    PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices