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| Category | Low Saturation Transistor |
|---|---|
| Compliance(Only Automotive supports PPAP) | Standard |
| Polarity | PNP |
| VCEO, VCES (V) | 40 |
| IC (A) | 3 |
| ICM (A) | 9 |
| PD (W) | 1.25 |
| hFE (Min) | 300 |
| hFE (@ IC) (A) | 0.01 |
| hFE(Min 2) | 30 |
| hFE (@ IC2) (A) | 3 |
| VCE(sat) Max (mV) | 260 |
| VCE(SAT) (@ IC/IB) (A/mA) | 1/20 |
| VCE(sat) (Max.2) (mV) | 220 |
| VCE(sat) (@ IC/IB2) (A/mA) | 3/300 |
| fT (MHz) | 270 |
| RCE(sat) (mΩ) | 55 |
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
| PCN-2305 | 2018-02-28 | 2018-05-28 | Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices |
