Diodes Menu Close
Back to Transistors < 30V

ZXTP25020CFH

PNP, 20V, 4A, SOT23

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Application(s)

  • MOSFET and IGBT gate driving
  • DC - DC converters
  • Motor drive
  • High side driver
  • Product Specifications

    Product Parameters

    Category Low Saturation Transistor
    Compliance(Only Automotive supports PPAP) Standard
    Polarity PNP
    VCEO, VCES (V) 20
    IC (A) 4
    ICM (A) 10
    PD (W) 1.25
    hFE (Min) 200
    hFE (@ IC) (A) 0.01
    hFE(Min 2) 85
    hFE (@ IC2) (A) 4
    VCE(sat) Max (mV) 100
    VCE(SAT) (@ IC/IB) (A/mA) 1/20
    VCE(sat) (Max.2) (mV) 170
    VCE(sat) (@ IC/IB2) (A/mA) 2/40
    fT (MHz) 285
    RCE(sat) (mΩ) 34

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Calculators

    Recommended Soldering Techniques

    TN1.pdf

    Orderable Part Number Buy from Distributor / Contact Sales Request Samples
    ZXTP25020CFHTA

    ZXTP25020CFHTA

    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Arrow Electronics 2689 9/19/2021 United States Buy Now
    Digi-Key Electronics 5629 9/19/2021 Europe, Asia, North America Buy Now
    Mouser Electronics Inc. 5139 9/19/2021 South America, North America, Asia, Europe, Middle East Buy Now
    RS Components 610 9/19/2021 England Buy Now
    Request Sample

    PCNs

    Product Change Notices

    PCN # Issue Date Implementation Date Subject
    PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
    Source for Select Discrete Products
    PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices