PNP, 40V, 1A, SOT23
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This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
Category |
Medium Power Transistor |
Polarity |
PNP |
VCEO, VCES (V) |
40 |
IC (A) |
1 |
ICM (A) |
2 |
PD (W) |
0.35 |
hFE (Min) |
300 |
hFE (@ IC) (A) |
0.001 |
hFE(Min 2) |
160 |
hFE (@ IC2) (A) |
1 |
VCE(sat) Max (mV) |
200 |
VCE(SAT) (@ IC/IB) (A/mA) |
0.1/1 |
VCE(sat) (Max.2) (mV) |
350 |
VCE(sat) (@ IC/IB2) (A/mA) |
0.5/20 |
fT (MHz) |
300 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2750 | 2025-08-28 | 2025-11-27 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test (A/T) Site with Standardization of Assembly Bill of Materials and Change of Lead Frame Type as well as Die Attach Material at Currently Qualified A/T Site for Select Discrete Products |