Diodes Incorporated
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PNP, 60V, 4.3A, SOT89

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  • BVCEO > -60V
  • IC = -4.3A High Continuous Current
  • RSAT = 32mΩ for a Low Equivalent On-Resistance
  • Low Saturation Voltage VCE(sat) < -65mV @ IC = -1A
  • hFE Specified up to -10A for High Current Gain Hold up
  • Complementary NPN Type: ZXTN2010ZQ
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device 
  • The ZXTP2012ZQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF16949
    certified facilities.

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity PNP
IC (A) 4.3
ICM (A) 15
PD (W) 2.1
hFE (Min) 100
hFE (@ IC) (A) 0.01
hFE(Min 2) 45
hFE (@ IC2) (A) 5
VCE(sat) Max (mV) 20
VCE(SAT) (@ IC/IB) (A/mA) 0.1/10
VCE(sat) (Max.2) (mV) 110
VCE(sat) (@ IC/IB2) (A/mA) 2/200
fT (MHz) 120
RCE(sat) (mΩ) 32

Related Content


Technical Documents


Recommended Soldering Techniques


Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2324 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected Automotive BJT Devices