Diodes Incorporated
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PNP, 60V, 4.3A, SOT89

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Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions.


  • BVCEO > -60V
  • IC = -4.3A High Continuous Current
  • RSAT = 32mΩ for a Low Equivalent On-Resistance
  • Low Saturation Voltage VCE(sat) < -65mV @ IC = -1A
  • hFE Specified Up to -10A for High Current Gain Hold Up
  • Complementary NPN Type: DIODES™ ZXTN2010Z
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An Automotive-Compliant Part is Available Under Separate Datasheet (ZXTP2012ZQ)


  • Emergency Lighting Circuits
  • Motor Driving (Including DC Fans)
  • Backlight Inverters
  • Power Switches
  • Gate Driving MOSFETs and IGBTs

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity PNP
IC (A) 4.3
ICM (A) 15
PD (W) 2.1
hFE (Min) 100
hFE (@ IC) (A) 0.01
hFE(Min 2) 45
hFE (@ IC2) (A) 5
VCE(sat) Max (mV) 20
VCE(SAT) (@ IC/IB) (A/mA) 0.1/10
VCE(sat) (Max.2) (mV) 110
VCE(sat) (@ IC/IB2) (A/mA) 2/200
fT (MHz) 120
RCE(sat) (mΩ) 32

Related Content


Technical Documents


Recommended Soldering Techniques


Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2313 2019-10-21 2020-01-21 Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Conversion
to Copper Bond Wire, and Qualification of Additional Die Passivation Layer on Select Products
PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices