Diodes Incorporated
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ZXTP2009ZQ

PNP, 40V, 5.5A, SOT89

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Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirement of automotive applications.

Feature(s)

  • BVCEO > -40V
  • IC = -5.5A Continuous Collector Current
  • ICM = -15A Peak Pulse Current
  • Very Low Saturation Voltage VCE(SAT) < -60mV max @ -1A
  • RSAT = 29mΩ @ -5.5A for Low Equivalent On-Resistance
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The ZXTP2009ZQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • DC-DC converters
  • MOSFET gate drivers
  • Charging circuits
  • Power switches
  • Motor controls

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity PNP
VCEO, VCES (V) 40
IC (A) 5.5
ICM (A) 15
PD (W) 2.1
hFE (Min) 200
hFE (@ IC) (A) 0.01
hFE(Min 2) 110
hFE (@ IC2) (A) 5.5
VCE(sat) Max (mV) 30
VCE(SAT) (@ IC/IB) (A/mA) 0.1/10
VCE(sat) (Max.2) (mV) 175
VCE(sat) (@ IC/IB2) (A/mA) 2/40
fT (MHz) 152
RCE(sat) (mΩ) 29

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf